Accession Number : ADA326408
Title : Ligand Exchange Reactions in Organometallic Vapor-Phase Epitaxy.
Descriptive Note : Technical rept. no. 7,
Corporate Author : CALIFORNIA UNIV LOS ANGELES
Personal Author(s) : Kappers, Menno J. ; Warddrip, Michael L. ; Wilkerson, Kerri J. ; Hicks, Robert F.
PDF Url : ADA326408
Report Date : 23 MAY 1997
Pagination or Media Count : 17
Abstract : The organometallic vapor phase epitaxy (OMVPE) of CdZnTe and InGaAs alloys has been studied using on-line infrared spectroscopy and ex-situ X-ray crystallography. During II-VI OMVPE, ligand exchange reactions between dimethylcadmium and diethylzinc produce more reactive ethylcadmium species, and less reactive methylzinc species. During III-V OMVPE, reactions between trimethylindium and triethylgallium produce more reactive ethylindium compounds and less reactive methylgallium compounds. The large difference in reactivities of these sources makes it difficult to control the group II and III composition during CdZnTe and InGaAs OMVPE.
Descriptors : *EXCHANGE REACTIONS, *INFRARED SPECTROSCOPY, *X RAY DIFFRACTION, *EPITAXIAL GROWTH, GALLIUM ARSENIDES, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, LIGANDS, CADMIUM TELLURIDES, ZINC TELLURIDES, ONLINE SYSTEMS, ALKYL RADICALS, INDIUM COMPOUNDS.
Subject Categories : Industrial Chemistry and Chemical Processing
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE