Accession Number : ADA327031

Title :   Low Engery/Low Noise Elec. Comp. for Mobile Platform Apps.

Descriptive Note : Final rept. 1 Sep 96-Jun 97,

Corporate Author : ILLINOIS UNIV AT CHICAGO CIRCLE

Personal Author(s) : Leong, S. K. ; Shenai, Krishna

PDF Url : ADA327031

Report Date : 13 JUN 1997

Pagination or Media Count : 30

Abstract : We prototyped Polyfet RF Device's 80V LDMOSFETs on bulk silicon substrates using advanced numerical two-dimensional (2D) finite-element semiconductor process and device simulators and showed excellent agreement between measured and simulated DC and RF parameters. This infrastructure was then used to develop a number of 40V LDMOSFET designs, both on bulk silicon and SOI material, and identify optimum device structures suitable for further development in Phase II. Our Phase I research has shown the SOI LDMOSFETs promise significant improvements in gain, noise figure, efficiency and manufacturing cost compared to bulk devices. These results are highly promising and provide the impetus for further investigation and development.

Descriptors :   *FIELD EFFECT TRANSISTORS, *RADIOFREQUENCY AMPLIFIERS, *SILICON ON INSULATOR, COMPUTERIZED SIMULATION, FINITE ELEMENT ANALYSIS, METAL OXIDE SEMICONDUCTORS, POWER AMPLIFIERS, DIRECT CURRENT, BIPOLAR TRANSISTORS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE