Accession Number : ADA327210
Title : Atomic Layer Control of Thin Film Growth Using Binary Reaction Sequence Chemistry,
Corporate Author : COLORADO UNIV AT BOULDER DEPT OF CHEMISTRY
Personal Author(s) : George, Steven M.
PDF Url : ADA327210
Report Date : JUN 1997
Pagination or Media Count : 17
Abstract : Our research is focusing on the atomic layer control of thin film growth. Our goal is to deposit films with precise control of thickness and conformality on both flat and high aspect ratio structures. Atomic layer control of growth is crucial for many technologies that require nanoscale deposition techniques to fabricate ultrathin and conformal films with thicknesses from 10-100 A. Examples of these films are ultrathin gate oxides, high dielectric constant films, conformal transparent conducting layers and ultrathin diffusion barriers.
Descriptors : *THIN FILMS, *SEQUENCES, *CHEMISTRY, CONTROL, THICKNESS, HIGH RATE, GROWTH(GENERAL), STRUCTURES, FILMS, GATES(CIRCUITS), DIELECTRIC FILMS, DEPOSITS, DIELECTRIC PROPERTIES, OXIDES, CHEMICAL REACTIONS, CONSTANTS, PRECISION, BARRIERS, THINNESS, DIFFUSION, ASPECT RATIO, CONFORMAL STRUCTURES.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE