Accession Number : ADA327344

Title :   Sub Tenth Micron CMOS Devices - A Demonstration of the Virtual Factory Approach to New Structure Design.

Descriptive Note : Annual rept. 1 Jul 94-30 Jun 95,

Corporate Author : STANFORD UNIV CA INTEGRATED CIRCUITS LAB

Personal Author(s) : Plummer, James D.

PDF Url : ADA327344

Report Date : 29 AUG 1995

Pagination or Media Count : 5

Abstract : The parent program 'Semiconductor Manufacturing For the 21st Century' has focused on showing the power of a 'Virtual Factory' operating in parallel with a computer controlled 'Programmable Factory'. This project is exploring the use of advanced TCAD simulation tools to design a candidate 21st century MOS device - a fully-depleted surrounding gate vertical MOSFET with self-aligned drain contact. The structure is a vertical MOSFET built in an etched silicon pillar. It has been built at much larger dimensions (1 micron) and shows significant promise of being scalable to very small dimensions. The project uses the 'Virtual Factory' to design the device and before actual fabrication in the lab at Stanford to test the correspondence between the simulation results and the actual experimental results.

Descriptors :   *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, CONTROL, SIMULATION, MANUFACTURING, COMPUTER PROGRAMMING, STRUCTURES, GATES(CIRCUITS), SEMICONDUCTORS, ETCHING, METAL OXIDE SEMICONDUCTORS, DRAINAGE, VERTICAL ORIENTATION, SILICON, MOSFET SEMICONDUCTORS.

Subject Categories : Electrical and Electronic Equipment
      Computer Programming and Software

Distribution Statement : APPROVED FOR PUBLIC RELEASE