Accession Number : ADA327442
Title : Low Voltage Electron Beam Lithography.
Descriptive Note : Monthly progress repts. Mar-Jun 96.
Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS
PDF Url : ADA327442
Report Date : 16 JUL 1996
Pagination or Media Count : 20
Abstract : The throughput of electron beam lithography has historically been limited by electron electron interactions that cause blurring at high currents. We present a system configuration for maskless parallel electron beam lithography using a new multiple primary source technology that, by employing widely spaced beams, significantly reduces this problem. The proposed source technology, a negative electron affinity (NEA) photocathode, allows us to generate an array of high brightness, low energy spread, independently modulated beams over a large area. In order to assess the effects of electron electron interactions in this system, Monte Carlo simulations have been performed. The results of these calculations indicate that this configuration enjoys significant advantages over existing maskless systems. By restricting the area of emission for the individual beamlets to submicron dimensions, the blurring due to statistical electron electron interactions can be significantly reduced for a given current at the wafer. For example, at 50 kV a total current of more than 2.5 alpha micron can be obtained with less than 10 nm beam blurring
Descriptors : *LOW VOLTAGE, *PHOTOCATHODES, *ELECTRON BEAM LITHOGRAPHY, SIMULATION, EMISSION, SOURCES, HIGH RATE, MODELS, INTERACTIONS, STATISTICS, ARRAYS, MONTE CARLO METHOD, HIGH RESOLUTION, AERONAUTICS, ELECTRONS, BRIGHTNESS, LOW ENERGY, PLANNING, CONFIGURATIONS, VACUUM APPARATUS, WAFERS, CURRENTS.
Subject Categories : Electrical and Electronic Equipment
Printing and Graphic Arts
Distribution Statement : APPROVED FOR PUBLIC RELEASE