Accession Number : ADA327508
Title : Low Temperature Materials Growth and Processing Development for Flat Panel Display Technology Applications.
Descriptive Note : Quarterly rept. 15 Feb-15 May 95,
Corporate Author : OREGON GRADUATE INST BEAVERTON
Personal Author(s) : Berglund, C. N.
PDF Url : ADA327508
Report Date : MAY 1995
Pagination or Media Count : 15
Abstract : A thin catalyst film of nickel (0.4 nm thick) on a silicon substrate was reduced in hydrogen at 875 deg C for 30 minutes. Carbon nanotubes were subsequently grown at 950-1000 deg C in less than 5 minutes. A more uniform electron emission was obtained in the vacuum testing station, compared to previous nanotube preparation techniques. Also the Fowler-Nordheim plots were more reproducible.
Descriptors : *ELECTRON EMISSION, *FLAT PANEL DISPLAYS, THIN FILMS, VACUUM, SUBSTRATES, CARBON, HYDROGEN, FIELD EMISSION, SILICON, NICKEL, NANOTECHNOLOGY.
Subject Categories : Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE