Accession Number : ADA327860
Title : Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method.
Descriptive Note : Interim technical rept. 1 Mar-1 Jun 97,
Corporate Author : JOINT STOCK CO AGENCY FOR SCIENCE AND TECHNOLOGY SAINT PETERSBURG (RUSSIA)
Personal Author(s) : Mokhov, E. N. ; Vodakov, Yu. A. ; Roenkov, A. D. ; Baranov, P. G. ; Boiko, M. E.
PDF Url : ADA327860
Report Date : 01 JUN 1997
Pagination or Media Count : 35
Abstract : The characterization of the GaN epilayers from 70 to 250 micrometers thickness grown by SSM on the 6H-SiC substrates was performed. Free carrier concentration in initially undoped GaN samples was found to range between 2 and 6 x 10(exp 17)/cu cm. Rocking curve measurements of the GaN layers grown by SSM reveal the full width of half maximum (FWHM) from 150 to 400 arc.sec. Three-dimensional 15-20 arc.sec. disoriented wirtzite domains looked like the hexagonal prism in size of cells of 50 nm were found. Correlation between the spectral luminescence characteristics, its spatial inhomogeneity and structural perfection of the grown layers was shown. Increasing of wide-band emission in visual spectrum and it spatial inhomogeneity was suggested to be caused by the local stoichiometry deviation. The Fe, Ni, Mn impurities states in the GaN crystals were discovered and identified by the EPR method.
Descriptors : *SPATIAL DISTRIBUTION, *OPTICAL PROPERTIES, *SINGLE CRYSTALS, *VAPOR PHASES, *ELECTRICAL PROPERTIES, *NITRIDES, *DEFECTS(MATERIALS), *GALLIUM COMPOUNDS, *PARAMAGNETIC MATERIALS, EMISSION, MEASUREMENT, LAYERS, STRUCTURAL PROPERTIES, GROWTH(GENERAL), GRAPHS, CHARGE CARRIERS, EPITAXIAL GROWTH, CRYSTALS, SPECTRA, BROADBAND, VISIBLE SPECTRA, HETEROGENEITY, LUMINESCENCE, SILICON CARBIDES, STOICHIOMETRY, PRISMS(OPTICS).
Subject Categories : Inorganic Chemistry
Laminates and Composite Materials
Distribution Statement : APPROVED FOR PUBLIC RELEASE