Accession Number : ADA328125
Title : Proceedings of the International Conference (9th) on Molecular Beam Epitaxy Held in Malibu, California, USA on 5-9 August 1996. Part I, Sections I-VIII.
Descriptive Note : Biennial conference,
Corporate Author : ELSEVIER SCIENCE PUBLISHERS LTD BARKING(UNITED KINGDOM)
Personal Author(s) : Kao, Y. C.
PDF Url : ADA328125
Report Date : 1996
Pagination or Media Count : 705
Abstract : In MBE-IX, 265 papers, including 14 invited talks, were selected from 400 abstract submissions. The percentage of papers being selected is the lowest as compared to previous International MBE conferences, indicating strong interest and growth in MBE development. MBE is now of fundamental importance in the creation of advanced new materials and device structures for electronics, optoelectronics, and photonics applications. MBE has progressed to the point that it is now an important tool for both research and production applications. The scope of the conference covered the entire spectrum of MBE technology, from material aspects to device applications. Topics include MBE technology and growth for III-V, II-VI compounds, group-IV elements and alloys; nitrides and antimonides, quantum dots, wires, and wells; in situ monitoring, control, processing, and characterization; gas-source MBE including MOMBE and CBE; and both electrical and optical-based device applications. A plenary session was held on Applications and future directions of MBE materials to overview and evaluate several MBE-based system insertion and applications.
Descriptors : *MOLECULAR BEAM EPITAXY, ELECTRONICS, SYMPOSIA, ELECTROOPTICS, COMPOSITE MATERIALS, WIRE, SINGLE CRYSTALS, EPITAXIAL GROWTH, ALLOYS, NITRIDES, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, CALIFORNIA, INTERNATIONAL, ANTIMONIDES, SOLID STATE ELECTRONICS, CHEMICAL ELEMENTS, GROUP II COMPOUNDS, GROUP VI COMPOUNDS.
Subject Categories : Physical Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE