Accession Number : ADA328229

Title :   MBE Growth of GaInAsSb.

Descriptive Note : Final rept. 15 Jan 93-14 Mar 97,

Corporate Author : NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO

Personal Author(s) : Iyer, Shanthi N.

PDF Url : ADA328229

Report Date : 23 JUL 1997

Pagination or Media Count : 49

Abstract : Optimum growth conditions for high quality growth of GaAs, GaSb, InSb and GaInAsSb epilayers by Molecular Beam Epitaxy (MBE) on GaAs substrates and homoepitaxial growth of InSb have been determined. A new procedure for expeditious removal of oxide desorption from InSb has been found. InSb epilayers grown on InSb substrate after the above oxide desorption exhibited x-ray rocking curve with full width half maxima of 13 arc-sec, reproducibly. Efforts of our research have also been devoted to aspects of material characterization. Low temperature photoreflectance (PR) of Te- doped GaSb has been used to determine the transition energy of spin-orbit split component of the fundamental band gap. Temperature dependence of this transition energy has been determined. These are the first PR reports on GaSb. Theoretical calculations of a novel InAsSb/InT1Sb superlattice structure lattice-matched to InSb indicated a type I band alignment, with optical band gap in the long-wavelength region.

Descriptors :   *GALLIUM COMPOUNDS, *MOLECULAR BEAM EPITAXY, THERMAL PROPERTIES, ORBITS, REMOVAL, OPTIMIZATION, COMPUTATIONS, MATERIALS, GALLIUM ARSENIDES, EPITAXIAL GROWTH, SUBSTRATES, SEMICONDUCTORS, ALIGNMENT, OXIDES, TRANSITIONS, SPLITTING, LONG WAVELENGTHS, DESORPTION, INDIUM, ARSENIC, TELLURIUM, ANTIMONIDES, SOLID STATE CHEMISTRY, I BAND.

Subject Categories : Inorganic Chemistry
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE