Accession Number : ADA328302
Title : Light-BEEM Technology: A Local Probe of Metal Semiconductor Interfaces.
Descriptive Note : Final technical rept.,
Corporate Author : ARIZONA UNIV TUCSON OPTICAL SCIENCES CENTER
Personal Author(s) : Sarid, Dror
PDF Url : ADA328302
Report Date : 13 JUN 1997
Pagination or Media Count : 6
Abstract : This final report describes an experimental system aimed studying a novel characterization method of metal-semiconductor interfaces which combines ballistic electron emission microscopy (BEEM) with optical excitations. The idea is that the spreading resistance, or space charge, associated with the ballistic electrons injected into the Schottky barrier by the tip of a scanning tunneling microscope (STM), can be modulated by optical excitation. The local photoresponse can therefore be mapped spatially across the barrier, below the metal electrode into which the STM is tunneling. The proposed technology will also enable one to directly measure the lifetime of the photoexcited carriers below the metal electrode, using short laser pulses at different wavelengths. The experimental system has been built, BEEM images acquired, and 1(V) curved measured. Lack of sufficient finding led to the termination of the project.
Descriptors : *METALS, *LIGHT, *SEMICONDUCTORS, *LASER BEAMS, *ELECTRON MICROSCOPY, *ELECTRON EMISSION, OPTICS, PROBES, SCANNING ELECTRON MICROSCOPES, INTERFACES, EXCITATION, TUNNELING(ELECTRONICS), ELECTRODES, SCHOTTKY BARRIER DEVICES, MODULATION, BALLISTICS, SPACE CHARGE, SHORT PULSES, PHOTOSENSITIVITY.
Subject Categories : Electrical and Electronic Equipment
Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE