Accession Number : ADA328360
Title : Low Energy/Low Noise Electronic Components for Mobile Platform Applications.
Descriptive Note : Final rept. 1 Sept 96-1 Jun 97,
Corporate Author : POLYFET RF DEVICES INC CAMARILLO CA
Personal Author(s) : Leong, S. K. ; Shenai, Krishna
PDF Url : ADA328360
Report Date : 13 JUN 1997
Pagination or Media Count : 30
Abstract : We prototyped Polyfet RF Device's 8OVLDMOSFETs on bulk silicon substrates using advanced numerical two-dimensional (2D-) finite-element semiconductor process and device simulators and showed excellent agreement between measured and simulated DC and RF parameters. This infrastructure was then used to develop a number of 40V LDMOSFET designs, both on bulk silicon and SOI material, and identify optimum device structures suitable for further development in Phase II. Our Phase I research has shown the SOI LDMOSFETs promise significant improvements in gain, noise figure, efficiency and manufacturing cost compared to bulk devices. These results are highly promising and provide the impetus for further investigation and development.
Descriptors : *RADIOFREQUENCY AMPLIFIERS, SIMULATORS, LOW COSTS, TWO DIMENSIONAL, FINITE ELEMENT ANALYSIS, FABRICATION, SUBSTRATES, SEMICONDUCTORS, SILICON, MOBILE, DIRECT CURRENT.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE