Accession Number : ADA328464
Title : Materials Research Society Symposium Proceedings. Volume 448. Control of Semiconductor Surfaces and Interfaces. December 2-5, 1996, Boston, Massachusetts.
Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA
Personal Author(s) : Prokes, S. M. ; Glembocki, O. J. ; Brierley, S. K. ; Gibson, J. M. ; Woodall, J. M.
PDF Url : ADA328464
Report Date : DEC 1996
Pagination or Media Count : 496
Abstract : These proceedings consist of refereed papers presented at the symposium on "Control of Semiconductor Surfaces and Interfaces," held as a part of the 1996 MRS Fall Meeting in Boston, MA. Semiconductor surfaces and interfaces play a vital role in modern-day electronic devices. This is especially true as device dimensions shrink. The properties of clean surfaces and chemically processed surfaces can also have a significant impact on the properties of subsequently grown layers. These surfaces and interfaces may exhibit modified structural, electronic and optical properties, so it is important to understand their effects on subsequent growth, processing and device fabrication. In this symposium topics include the structure of surfaces, control of surface defects and properties through chemical etching and passivation, modification of surfaces for growth and processing, nucleation on semiconductor surfaces and self-assembly, the effects of surfaces and interfaces on subsequent growth, and the properties of semiconductor/dielectric and semiconductor/metal interfaces. In addition, in situ and ex situ monitoring of these properties, using various electrical and optical techniques, was also presented.
Descriptors : *SYMPOSIA, *EPITAXIAL GROWTH, *SEMICONDUCTORS, INFRARED SPECTROSCOPY, INTERFACES, STRUCTURAL PROPERTIES, ADSORPTION, GALLIUM ARSENIDES, HETEROJUNCTIONS, MORPHOLOGY, THIN FILMS, X RAY DIFFRACTION, DIELECTRIC PROPERTIES, SILICON, CONDUCTION BANDS, SURFACE CHEMISTRY, DOPING, INDIUM PHOSPHIDES, ANTIMONY, CONTROL SURFACES, ZINC SELENIDES, NANOTECHNOLOGY.
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE