Accession Number : ADA328467

Title :   Materials Research Society Symposium Proceedings. Volume 449. III-V Nitrides. December 2-6, 1996, Boston, Massachusetts.

Corporate Author : MATERIALS RESEARCH SOCIETY PITTSBURGH PA

Personal Author(s) : Ponce, F. A. ; Moustakas, T. D. ; Akasaki, I. ; Monemar, B. A.

PDF Url : ADA328467

Report Date : DEC 1996

Pagination or Media Count : 1243

Abstract : The symposium reflected the large amount of work that has taken place in the last year, and much of the excitement that exists on this subject. The invited-talk program was designed to give a thorough review of the state-of- the-art in the field. The large number of contributions, in the form of talks and poster presentations, showed much progress in the growth and understanding of the III-V nitrides, and in the production of optoelectronic devices based on these materials. These proceedings represent the current state of the field, reflecting over 70% of the work presented at the symposium.

Descriptors :   *SYMPOSIA, *POINT DEFECTS, *CRYSTAL GROWTH, *MOLECULAR BEAM EPITAXY, OPTICAL PROPERTIES, MICROSTRUCTURE, STRUCTURAL PROPERTIES, QUANTUM WELLS, HETEROJUNCTIONS, THIN FILMS, CHEMICAL VAPOR DEPOSITION, ETCHING, ELECTRICAL PROPERTIES, NITRIDES, GROUP III COMPOUNDS, GROUP V COMPOUNDS, DOPING, N TYPE SEMICONDUCTORS, SILICON CARBIDES, HYDROGENATION, DIODE LASERS, NANOTECHNOLOGY, GALLIUM NITRIDES.

Subject Categories : Electrooptical and Optoelectronic Devices
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE