Accession Number : ADA328694
Title : Proceedings of the Ninth International Conference on Molecular Beam Epitaxy Held in Malibu, California on August 5-9, 1996. Part 2 Sections IX-XVIII.
Descriptive Note : Final rept.,
Corporate Author : CALIFORNIA UNIV LOS ANGELES
Personal Author(s) : Kao, Y. C.
PDF Url : ADA328694
Report Date : AUG 1997
Pagination or Media Count : 660
Abstract : In MBE-IX, 265 papers, including 14 invited talks, were selected from 400 abstract submissions. The percentage of papers being selected is the lowest as compared to previous International MBE conferences, indicating strong interest and growth in MBE development. MBE is now of fundamental importance in the creation of advanced new materials and device structures for electronics, optoelectronics, and photonics applications. MBE has progressed to the point that it is now an important tool for both research and production applications. The scope of the conference covered the entire spectrum of MBE technology, from material aspects to device applications. Topics include MBE technology and growth for III-V, II-VI compounds, group-IV elements and alloys; nitrides and antimonides, quantum dots, wires, and wells; in situ monitoring, control, processing, and characterization; gas-source MBE including MOMBE and CBE; and both electrical- and optical-based device applications. A plenary session was held on applications and future directions of MBE materials to overview and evaluate several MBE-based system insertion and applications.
Descriptors : *MOLECULAR BEAM EPITAXY, ELECTRONICS, OPTICS, SYMPOSIA, ELECTROOPTICS, COMPOSITE MATERIALS, SINGLE CRYSTALS, PHOTONICS, CRYSTAL GROWTH, SOLID STATE ELECTRONICS.
Subject Categories : Crystallography
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE