Accession Number : ADA328776
Title : Light Emission and Energy Transfer in Nanoscale Semiconductor Photonic Devices.
Descriptive Note : Final rept.,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERI NG
Personal Author(s) : Kolbas, Robert M.
PDF Url : ADA328776
Report Date : 28 JUL 1997
Pagination or Media Count : 10
Abstract : The overall objective of this experimental program is to control the light emission properties and energy transfer mechanisms in nanoscale semiconductor structures in order to realize new or improved photonic devices. For nanostructures that are defined by buried heterojunction interfaces the focus is to define the regimes in which scattering and carrier collection dominate the performance of quantum well and superlattice devices. For nanostructures with exposed surfaces the focus is to understand the fundamental light emission mechanisms. The proposed research impacts device development and system architectures by demonstrating light emitters for wavelength division multiplexing, three dimensional IOEC structures, broadly tunable lasers, and low loss waveguides. Most recently the impact of these phenomena have been studied in the wide bandgap A1GaN material system. We have demonstrated stimulated emission in GaN, InGaN thin films and quantum well heterostructures. We have also done absorption measurements and observed multiple excitons.
Descriptors : *ENERGY TRANSFER, *SEMICONDUCTOR DEVICES, *PHOTONICS, EMISSION, MEASUREMENT, SCATTERING, STIMULATION(GENERAL), TUNABLE LASERS, INTERFACES, CRYSTAL LATTICES, QUANTUM WELLS, GALLIUM ARSENIDES, HETEROJUNCTIONS, SUPERLATTICES, THIN FILMS, LIGHT, WAVEGUIDES, NITRIDES, SURFACES, LOW LOSS, ALUMINUM, GALLIUM, ABSORPTION, BURIED OBJECTS, EMITTERS, INDIUM, LIGHT EMITTING DIODES, EXCITONS, WAVELENGTH DIVISION MULTIPLEXING.
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE