Accession Number : ADA329066

Title :   Development of an Implant Isolation Process for Heterojunction Bipolar Transistors.

Descriptive Note : Final rept. 3 May 96-2 Feb 97,

Corporate Author : UNIVERSAL ENERGY SYSTEMS INC DAYTON OH

Personal Author(s) : Bhattacharya, Rabi S.

PDF Url : ADA329066

Report Date : APR 1997

Pagination or Media Count : 38

Abstract : There is great interest in heterojunction bipolar transistors (HBT) for high speed, high power electronic devices. The major problem in the fabrication of HBT circuits is the electrical isolation of individual devices in power device design, where it is desirable to have collector and sub-collector layers 1 micrometers thick or more. The objective of Phase I research was to develop device isolation schedules based on MeV energy O(+) and B(+) implantations. A number of ion implantation schedules based on O(+), O(+) + Ga(+), and B(+) implantations have been developed by using computer simulations. These schedules have been tested for the isolation of AlGaAs/GaAs and InGaP/GaAs HBTs. Low leakage currents and high breakdown voltages necessary for the optimum device performance have resulted from selected implantation schedules. Hall measurements were performed after various implantations using single layer n and p-type GaAs of known thickness and carrier concentrations. These data will be useful in optimizing dose levels for the above mentioned ion species for the desired isolation of devices.

Descriptors :   *HETEROJUNCTIONS, *ION IMPLANTATION, *BIPOLAR TRANSISTORS, COMPUTERIZED SIMULATION, HALL EFFECT, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, ELECTRONIC EQUIPMENT, ISOLATION, CHARGE CARRIERS, INDIUM PHOSPHIDES.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE