Accession Number : ADA329152
Title : Optimization of Properties of a New Material for Electronic and Magnetic Applications.
Descriptive Note : Interim rept. 15 Jul-14 Aug 97,
Corporate Author : SKION CORP HOBOKEN NJ
Personal Author(s) : Kim, Steven
PDF Url : ADA329152
Report Date : 14 AUG 1997
Pagination or Media Count : 5
Abstract : Several test samples were grown at the City College of New York MBE facility. The exact growth rate is unknown at present, but the nominal thickness are 12.5, 25, and 50 nm MnAs on 100 nm buffer layers of GaAs. The substrate orientations are (001). GaAs buffer layers are p-type with a carrier concentration of ^ 5x10(exp 17) cm(exp -3) and a thickness of ^ 100 nm. The nominal growth rate of MnAs was 50 nm/hour. Flux ratio of As/Mn was about 5-10. All the layers were annealed at 400 deg C for 1 minute after the growth (the time for increasing growth temperature from 250 to 400 deg C was about 4 minutes. Growth temperatures and growth times for MnAs layers are: B94: 200C for 7 min. 30 sec., 250C for 42 min. 30 sec.; B95: 200C for 1 min., 250C for 30 min.; and B96: 200C for 1 min., 250C for 14 min.
Descriptors : *GALLIUM ARSENIDES, *P TYPE SEMICONDUCTORS, PHASE TRANSFORMATIONS, THIN FILMS, X RAY DIFFRACTION, SUBSTRATES, MAGNETIC MATERIALS, MANGANESE COMPOUNDS.
Subject Categories : Electricity and Magnetism
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE