Accession Number : ADA329361
Title : Electronic Properties of Semimetal- Semiconductor (V/III-V) Heterostructures and Devices
Descriptive Note : Final rept. 1994-1997
Corporate Author : HOUSTON UNIV TX
Personal Author(s) : Golding, Terry D. ; Miller, J. H., Jr. ; Ting, C. S.
PDF Url : ADA329361
Report Date : 01 JUL 1997
Pagination or Media Count : 10
Abstract : The project involved an experimental investigation of the synthesis and the electrical transport properties of semimetal-semiconductor based heterostructures and devices. The structures consisted of elemental (Sb) semimetals in combination with antimonide based III-V semiconductors (GaSb). The investigation of these novel semimetal-semiconductor heterostructures was motivated by their unique electronic properties and potential device applications, including high conductivity interconnects, double-barrier semimetal-base resonant tunneling transistors, and nanostructures operating in the mesoscopic regime. The structures were synthesized using molecular beam epitaxy, and their structural and electrical transport properties were investigated. In addition to substantially enhanced understanding of this materials combination the project resulted in the demonstration of double barrier Sb/GaSb resonant tunneling structures exhibiting negative differential resistances and Sb submicron loops displaying Aharonov-Bohm oscillations.
Descriptors : *SEMICONDUCTORS, ELECTRONICS, SYNTHESIS, STRUCTURAL PROPERTIES, RESISTANCE, ELECTROMAGNETIC PROPERTIES, ELECTRICAL PROPERTIES, TRANSPORT PROPERTIES, GALLIUM, GROUP III COMPOUNDS, GROUP V COMPOUNDS, ANTIMONIDES, TRANSISTORS, METALLOIDS, MOLECULAR BEAM EPITAXY.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE