Accession Number : ADA329582
Title : Numerical Studies of the Physics and Operation of LTG Materials and Devices
Descriptive Note : Final rept. 15 Mar 94-14 Mar 97
Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Personal Author(s) : Grubin, Harold L.
PDF Url : ADA329582
Report Date : AUG 1997
Pagination or Media Count : 31
Abstract : This document summarizes Scientific Research Associates, Inc., (SRA) low temperature material studies carried out under U.S. Air Force Office of Scientific Research (AFOSR) Contract F49620-94-C-0024. The study summarizes a model that was developed that is consistent with present low temperature growth (LTG) experimental studies. SRA's study included one dimensional transient simulations and two dimensional time independent constrained geometric studies. The broad aspects of the study indicate that annealed LTG GaAs is best represented as material containing precipitates with characteristics of embedded Schottky barriers. These embedded barriers are, in turn surrounded by defects. Carrier transport in annealed LTG GaAs is between the precipitates, with the details determined by the precipitate spacing, the concentration of traps, and properties of the surrounding traps. The two dimensional studies provide numerical evidence that carriers travel between precipitates and are influenced, to first order, by the properties of the surrounding traps.
Descriptors : *LOW TEMPERATURE, *GALLIUM ARSENIDES, *SCHOTTKY BARRIER DEVICES, *CRYSTAL GROWTH, *PRECIPITATES, EXPERIMENTAL DATA, TWO DIMENSIONAL, ONE DIMENSIONAL, TRAPS.
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE