Accession Number : ADA329609
Title : High Power, Broadband, Linear, Solid State Amplifier.
Descriptive Note : Annual rept. no 1, 1 Sep 96-31 Aug 97,
Corporate Author : CORNELL UNIV ITHACA NY DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Eastmen, Lester F. ; Chu, K. ; Weimann, N. ; Green, B. ; Murphy, M.
PDF Url : ADA329609
Report Date : SEP 1997
Pagination or Media Count : 48
Abstract : A1GaN/GaN MODFET's grown by MBE and OMVPE with less than 25, micrometers gate lengths, yield up to 50 and 100 GHz for fk and fmax respectively. A substantial effort on circuits for combining power, including both direct power combining and traveling wave combining has been started, along with experimental studies of large pheriphery devices. A new analytical model for the effect of dislocations on electron mobility has been made, and electron transport in III-nitrides has been studied using the Monte Carlo method. Epitaxial growth on SiC and sapphire is being carried out by both MBE and OMVPE, and studied by high resolution STEM. Bulk crystallites 250 micrometers in diameter, have been grown and will be used as seeds for growth of larger boules.
Descriptors : *MONTE CARLO METHOD, *TRAVELING WAVES, *RADIOFREQUENCY AMPLIFIERS, MATHEMATICAL MODELS, HIGH POWER, EXPERIMENTAL DATA, ELECTRON TRANSPORT, GATES(CIRCUITS), EPITAXIAL GROWTH, FIELD EFFECT TRANSISTORS, BROADBAND, CIRCUIT INTERCONNECTIONS, MICROWAVE TUBES, BIPOLAR TRANSISTORS, ELECTRON MOBILITY, MICROMETERS, GALLIUM NITRIDES.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE