Accession Number : ADA329642
Title : Proposal for Partial Support of the 9th International Molecular Beam Epitaxy (MBE) Conference
Descriptive Note : Final rept. 1 Jul 96-30 Jun 97
Corporate Author : CALIFORNIA UNIV LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Wang, Kang L.
PDF Url : ADA329642
Report Date : AUG 1996
Pagination or Media Count : 462
Abstract : The Ninth International Conference on Molecular Beam Epitaxy (MBB-IX) was held on the campus of the Pepperdine University, Malibu, California, from August 5 to 9, 1996. In this conference, the major theme highlighted the success of MBE technology to the state that it is now a commercial tool for manufacturing integrated circuits. The topics critical to the development and advance of MBE were covered and they ranged from material aspects of growth, processing and characterization to relevant physics and device properties of the resulting films and structures. Specific topics included growth and growth mechanisms of MBE, characterization of MBE films and interfaces, advances in MBE and related techniques, such as MEE, GSMBE, and MOMBE Physics and MBE grown devices and structures.
Descriptors : *SYMPOSIA, *METAL NITRIDE OXIDE SEMICONDUCTORS, *MOLECULAR BEAM EPITAXY, *HIGH ELECTRON MOBILITY TRANSISTORS, HETEROJUNCTIONS, INTEGRATED CIRCUITS, MILLIMETER WAVES, SILICON, QUANTUM ELECTRONICS, DOPING, ERBIUM, LIGHT EMITTING DIODES, BIPOLAR TRANSISTORS, GALLIUM ARSENIDE LASERS, MICROWAVE RECEIVERS, DIODE LASERS, MASS PRODUCTION.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE