Accession Number : ADA329701
Title : Studies of Surface Processes during Growth of Epitaxial Boron Nitride
Descriptive Note : Final rept. 1 Jun 93-31 May 97
Corporate Author : CARNEGIE-MELLON UNIV PITTSBURGH PA DEPT OF ELECTRICAL AND COMPUTER ENGINEERIN G
Personal Author(s) : Greve, D. W.
PDF Url : ADA329701
Report Date : 29 JUL 1997
Pagination or Media Count : 27
Abstract : Cubic boron nitride has proven to be a challenging semiconductor to grow epitaxially. In large part this is due to its chemical similarity to diamond in that the hexagonal (or graphic) sp2-bonded phase often forms at ambient conditions rather than the sp3- bonded form. in this contract, we have investigated the possible formation of sp3- bonded forms of BN on particularly suitable substrates. Both Ni(100) and AlN have been studied. A careful study of the Ni(100) surface has shown that the hexagonal phase is formed when diborane and ammonia react thermally (without ionic bombardment). Work on AlN substrates is less complete but so far no evidence for formation of the sp3-bonded phase has emerged.
Descriptors : *SURFACE CHEMISTRY, *BORON NITRIDES, EPITAXIAL GROWTH, SEMICONDUCTORS, AMMONIA, NICKEL, DIBORANES.
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE