Accession Number : ADA329713
Title : Non-Linear Terahertz Electronics with Self Organized Rare-Earth Arsenide Semi-Metal/Semiconductor Composites
Descriptive Note : Final rept. 1 Aug 93-31 Jul 97
Corporate Author : CALIFORNIA UNIV SANTA BARBARA QUANTUM INST
Personal Author(s) : Allen, S. James
PDF Url : ADA329713
Report Date : 1996
Pagination or Media Count : 7
Abstract : A new materials arena has been opened for quantum electron transport devices based on magnetic, semi-metal compound semiconductor heterostructures. Epitaxial ultrathin films of a rare earth arsenide, ErAs, were grown in GaAs semiconductors. The dissimilarities between the ErAs, a magnetic semimetal, and the compound semiconductor make possible the fabrication of three terminal resonant tunneling transistors with ultra thin semi-metal quantum wells. Resonant tunneling through semi-metal quantum wells was observed for the first time. A strong coupling of the magnetization and the resonant tunneling was discovered that demonstrates magnetization controlled resonant tunneling. Nano-composites of ErAs / GaAs were also grown. Electron transport in these systems exhibits giant magnetoresistance magnetization controlled island to island electron hopping transport. This research program has opened the possibility of high density, non-volatile information storage and processing based on magnetic, semi-metallic, quantum structures grown and integrated into compound semiconductor heterostructures.
Descriptors : *QUANTUM WELLS, *HETEROJUNCTIONS, *METAL OXIDE SEMICONDUCTORS, COUPLING(INTERACTION), ELECTRON TRANSPORT, GALLIUM ARSENIDES, METAL FILMS, THIN FILMS, EPITAXIAL GROWTH, SEMICONDUCTING FILMS, ERBIUM, MAGNETORESISTANCE.
Subject Categories : Quantum Theory and Relativity
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE