Accession Number : ADA329732
Title : Quantum Device Fabricant Based on High Resolution Patterning with Reactive Neutral Beams.
Descriptive Note : Final rept. 1 Jul 93-30 Jun 97,
Corporate Author : COLUMBIA UNIV NEW YORK RADIOLOGICAL RESEARCH LAB
Personal Author(s) : Osgood, Richard M., Jr
PDF Url : ADA329732
Report Date : 26 AUG 1997
Pagination or Media Count : 7
Abstract : Research performed at Columbia University in which etch-defined features were fabricated in multiple quantum well semiconductor material, is described. Photon-assisted neutral atom etching was demonstrated to produce damage free features in GaAs-based quantum well material. The technique was applied in the fabrication of a single quantum well circular ring laser with low-loss etched sidewalls. The photoluminescence efficiency of magnetron reactive ion etched features was also investigated as a function of rf power and etching time. Low-temperature electron-beam enhanced etching and chemically assisted ion beam etching were characterized and applied to the fabrication of nanometer-sized features in III-V semiconductor material.
Descriptors : *QUANTUM WELLS, *PHOTOLUMINESCENCE, *ION BEAMS, *ETCHING, RING LASERS, LOW TEMPERATURE, MATERIALS, QUANTUM THEORY, GALLIUM ARSENIDES, FABRICATION, HIGH RESOLUTION, ELECTRON BEAMS, CIRCULAR, RADIOFREQUENCY POWER.
Subject Categories : Optics
Distribution Statement : APPROVED FOR PUBLIC RELEASE