Accession Number : ADA329744
Title : Nanoscopic Processing and Atomistic Kinetics of Lattice Mismatched Growth on Submicron Mesas
Descriptive Note : Final rept. 1 Apr 93-31 May 97,
Corporate Author : CALIFORNIA UNIV LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Madhukar, Anupan ; Chen, Ping
PDF Url : ADA329744
Report Date : 28 AUG 1997
Pagination or Media Count : 15
Abstract : This Final technical report summarizes the most important findings of the research work on (a) lattice mismatch strain induced formation of coherent 3D islands, also dubbed self-assembled quantum dots, and (b) growth of such island quantum dots on in-situ growth control prepared submicron width stripe mesas. The specific accomplishments include the demonstration of (1) a re-entrant behavior of 2D to 3D island morphology evolution, (2) mass exchange between 2D and 3D features during evolution of their density, (3) quantum box nature of the 3D islands via photoluminescence excitation spectroscopy, (4) 3D island strain driven adatom migration during cap layer growth, (5) vertically self-organized growth of island quantum dots, (6) lasing from single and vertically self-organized stacks of quantum dots, and (7) selective area growth of InAs island quantum dots on sub 100 nm GaAs(001) stripe mesa via control of interfacet In migration.
Descriptors : *REACTOR KINETICS, *NANOTECHNOLOGY, *QUANTUM DOTS, SPECTROSCOPY, GROWTH(GENERAL), EXCITATION, PHOTOLUMINESCENCE, MORPHOLOGY, SEMICONDUCTOR DIODES, VERTICAL ORIENTATION, PLANAR STRUCTURES, SELF ORGANIZING SYSTEMS.
Subject Categories : Electricity and Magnetism
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE