Accession Number : ADA329760

Title :   In-Situ Studies of Metal on III-V Semiconductors

Descriptive Note : Final rept. 1 May 93-30 Apr 97

Corporate Author : NORTHWESTERN UNIV EVANSTON IL

Personal Author(s) : Marks, L. D.

PDF Url : ADA329760

Report Date : APR 1997

Pagination or Media Count : 8

Abstract : Research has been performed using high resolution electron microscopy under ultra-high vacuum (UHV) conditions on a number of metal semiconductor systems. The new system combining classical surface characterization techniques and growth has been installed on a UHV microscope and fully tested. The growth at the monolayer level of Au and Ay on Si (001) has been studied combining XPS and electron microscopy. Studies of the growth of Au on both air introduced and Ga-rich GaAs (001) substrates have been performed. A variety of new methodologies and techniques have been developed, most notably atomic scale imaging of surfaces at a higher level than previously possible and new methods of determining surface structures just from electron (or x-ray) diffraction data. Electron microscopy studies of MoS2 lubricant films are also described.

Descriptors :   *METAL OXIDE SEMICONDUCTORS, *ELECTRON MICROSCOPY, GALLIUM ARSENIDES, THIN FILMS, X RAY DIFFRACTION, EPITAXIAL GROWTH, NUCLEATION, SILICON, ELECTRON DIFFRACTION, ULTRAHIGH VACUUM, ATOMIC STRUCTURE.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE