Accession Number : ADA329780

Title :   JSEP Augmentation Proposal: Velocity Overshoot in Silicon Inversion Layer

Descriptive Note : Final rept. 1 Jul 94-30 Jun 97

Corporate Author : CALIFORNIA UNIV BERKELEY ELECTRONICS RESEARCH LAB

Personal Author(s) : Bokor, Jeffrey ; Hu, Chenming

PDF Url : ADA329780

Report Date : 31 AUG 1997

Pagination or Media Count : 4

Abstract : The transport properties of carriers in the inversion layer was studied by using the thick-gate uniform channel field MOS transistor. Using devices with sub-100nm channel lengths, we performed an extensive investigation of ballistic transport in inversion layer under uniform field condition. We experimentally address the effect of a wide range of parameters on the high-field transport of Inversion layer electrons and holes. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocities on nitridation of the gate oxide, dependence of the high-field drift velocity on the effective vertical field, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.

Descriptors :   *ELECTRON TRANSPORT, *SILICON, SURFACE ROUGHNESS, FIELD EFFECT TRANSISTORS, CARRIER MOBILITY.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE