Accession Number : ADA329788
Title : Plasma Immersion Ion Implantation Process for Semiconductor Fabrication. Linear & Reentrant Crossed-Field Amplifiers for in situ Measurements, Comparisons with Numerical Simulations and Study of Noise Mechanisms.
Descriptive Note : Final rept. 30 Dec 93-29 Dec 96,
Corporate Author : NORTHEASTERN UNIV BOSTON MA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Chan, Chung ; Ye, J.
PDF Url : ADA329788
Report Date : DEC 1996
Pagination or Media Count : 28
Abstract : We have performed in situ measurements in two low frequency CFAs to study several basic physics issues which may lead to CFA noise reduction. Our measurements include the local radio-frequency (RF) fields, electron density profiles, electron energy distributions and noise spectrums in both the linear CFA and the reentrant CFA. Comprehensive electron density measurements of the interaction region as well as parametric comparisons such as gain versus sole voltage, beam current and frequency have been used to benchmark two computer simulation codes, MASK and NESSP.
Descriptors : *PLASMAS(PHYSICS), *FABRICATION, *SEMICONDUCTORS, *RADIOFREQUENCY, MEASUREMENT, DISTRIBUTION, ELECTRON DENSITY, ELECTRONS, ELECTRON ENERGY, SPECTRA, PROFILES, NOISE, NOISE REDUCTION, LOW FREQUENCY.
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Plasma Physics and Magnetohydrodynamics
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE