Accession Number : ADA329816
Title : Development of Advanced Electronic Materials and Devices for Ultra-Low 1/f Noise and Low Leakage Current Applications
Descriptive Note : Final rept. 1 Jun 94-31 May 97
Corporate Author : MISSOURI UNIV-ST LOUIS DEPT OF PHYSICS
Personal Author(s) : Handel, Peter H.
PDF Url : ADA329816
Report Date : 15 JUL 1997
Pagination or Media Count : 39
Abstract : This report contains practical applications of the Quantum 1/f Effect, theory development, and contributions not directly based on quantum 1/f noise. The application to quartz resonators was improved by the inclusion of crystal defects in the calculation, and was generalized to the case of low-Q and SAW devices. The generalization is important, introducing the notion of incoherence between quantum 1/f fluctuations of the phonon loss rate in various regions of the crystal. The applications also include calculation of quantum 1/f noise in gallium nitride. It is 3-10 times lower in GaN than in GaAs. The theory was reformulated on the basis of the new negative conditional quantum entropy concept explaining the apparent entropy production in 1/f noise by simultaneous production of negative-entropy soft photon states. A long-standing conceptual difficulty is eliminated on this basis of tremendous importance is the discovery during this grant of a new method connecting the coherent and conventional quantum 1/f effects. A mass distribution was found which allows to find the quantum 1/f noise in general. A method of gate current suppression in HFET and a two-dimensional all-optical TDM system were studied.
Descriptors : *QUANTUM THEORY, *QUARTZ RESONATORS, *SURFACE ACOUSTIC WAVE DEVICES, GATES(CIRCUITS), SEMICONDUCTOR DEVICES, FIELD EFFECT TRANSISTORS, NONLINEAR SYSTEMS, CRYSTAL DEFECTS, LEAKAGE(ELECTRICAL), NOISE(ELECTRICAL AND ELECTROMAGNETIC), BIPOLAR TRANSISTORS, GALLIUM NITRIDES.
Subject Categories : Line, Surface and Bulk Acoustic Wave Devices
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE