Accession Number : ADA330866
Title : The Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium Nitride
Descriptive Note : Technical rept.
Corporate Author : DUKE UNIV DURHAM NC DEPT OF CHEMISTRY
Personal Author(s) : Coffer, Jeffery L. ; Anderson, Marc A. ; Zhang, Libing ; Wells, Richard L. ; Janik, Jerzy F.
PDF Url : ADA330866
Report Date : 23 OCT 1997
Pagination or Media Count : 13
Abstract : In this communication, the impact of preparative methods on the photoluminescence of nanophase GaN materials is reported. In general, the observed emission spectra are strongly dependent on the choice of precursor and the pyrolysis temperature used to convert it to GaN. The GaN derived from gallium imide, ?Ga(NH)3/2!n, typically exhibits yellow defect photoluminescence, with the pyrolysis temperature influencing the intensity of the emission. Pyrolysis of this same precursor in relatively high boiling N, N, N', N'-tetramethyl- 1, 6-hexanediamine yields blue photoluminescence with an emission maximum near 420 nm. In contrast, GaN derived from the pyrolysis of gallazane precursors, H2GaNH23 and a related polymeric solid, yields blue light emission whose quantum yield can be improved by a brief HF etch.
Descriptors : *PHOTOLUMINESCENCE, *GALLIUM NITRIDES, ELECTROOPTICS, POLYMERS, PRECURSORS, EMISSION SPECTRA, ETCHING, PYROLYSIS, IMIDES, POLYCRYSTALLINE.
Subject Categories : Physical Chemistry
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE