Accession Number : ADA331054
Title : Electrochemical Atomic Layer Epitaxy
Descriptive Note : Technical rept. May 96-Sep 97
Corporate Author : GEORGIA UNIV ATHENS DEPT OF CHEMISTRY
Personal Author(s) : Stickney, John L.
PDF Url : ADA331054
Report Date : 16 OCT 1997
Pagination or Media Count : 206
Abstract : This is a review of work performed in the P.I.'s laboratory concerning development of the method of electrochemical atomic layer epitaxy. It includes an introduction covering compound semiconductor electrodeposition, with a table containing about 400 references. It contains a chapter on thin layer electrochemical studies, which are frequently used to get an initial idea of the conditions that should be used in an automated deposition cycle. There is a section on the development of the automated flow deposition system, and the growth of thin films of CdTe. There is a section on the atomic level characterization of these films using surface analytical methods. There is a section on the inverse of electrochemical ALE, digital etching. In those studies atomic layers are removed one at a time. There is also a conclusions section describing here we feel these techniques are going.
Descriptors : *ELECTROCHEMISTRY, *SEMICONDUCTORS, *ATOMIC LAYER EPITAXY, DIGITAL SYSTEMS, AUTOMATION, LAYERS, THIN FILMS, EPITAXIAL GROWTH, ETCHING, CYCLES, SURFACES, DEPOSITION, CADMIUM TELLURIDES, FLOW, ATOMIC ENERGY LEVELS, ELECTRODEPOSITION.
Subject Categories : Physical Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE