Accession Number : ADA331054

Title :   Electrochemical Atomic Layer Epitaxy

Descriptive Note : Technical rept. May 96-Sep 97

Corporate Author : GEORGIA UNIV ATHENS DEPT OF CHEMISTRY

Personal Author(s) : Stickney, John L.

PDF Url : ADA331054

Report Date : 16 OCT 1997

Pagination or Media Count : 206

Abstract : This is a review of work performed in the P.I.'s laboratory concerning development of the method of electrochemical atomic layer epitaxy. It includes an introduction covering compound semiconductor electrodeposition, with a table containing about 400 references. It contains a chapter on thin layer electrochemical studies, which are frequently used to get an initial idea of the conditions that should be used in an automated deposition cycle. There is a section on the development of the automated flow deposition system, and the growth of thin films of CdTe. There is a section on the atomic level characterization of these films using surface analytical methods. There is a section on the inverse of electrochemical ALE, digital etching. In those studies atomic layers are removed one at a time. There is also a conclusions section describing here we feel these techniques are going.

Descriptors :   *ELECTROCHEMISTRY, *SEMICONDUCTORS, *ATOMIC LAYER EPITAXY, DIGITAL SYSTEMS, AUTOMATION, LAYERS, THIN FILMS, EPITAXIAL GROWTH, ETCHING, CYCLES, SURFACES, DEPOSITION, CADMIUM TELLURIDES, FLOW, ATOMIC ENERGY LEVELS, ELECTRODEPOSITION.

Subject Categories : Physical Chemistry
      Fabrication Metallurgy
      Crystallography
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE