Accession Number : ADA331429

Title :   Solution of 1-D Schrodinger and Poisson Equations in Single and Double Gate SOI MOS

Corporate Author : FERRARA UNIV (ITALY)

Personal Author(s) : Fiegna, Claudio ; Abramo, Antonio

PDF Url : ADA331429

Report Date : 1995

Pagination or Media Count : 4

Abstract : In this paper the self-consistent solution of Schrodinger and Poisson equations is applied to single and double gate SOI MOS structures. The reasons for possible advantages related to the presence of the two symmetric gates in the latter case are investigated.

Descriptors :   *METAL OXIDE SEMICONDUCTORS, *SCHRODINGER EQUATION, *POISSON EQUATION, *SILICON ON INSULATOR, THIN FILMS, GATES(CIRCUITS), ELECTRIC FIELDS, FIELD EFFECT TRANSISTORS, DOPING, TRANSCONDUCTANCE, ELECTRON MOBILITY.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE