Accession Number : ADA331495
Title : Analysis of Quantum Effects in Non-Uniformly Doped MOS Structures
Corporate Author : MODENA UNIV (ITALY) IST DI FISICA
Personal Author(s) : Fiegna, Claudio ; Abramo, Antonio
PDF Url : ADA331495
Report Date : 23 SEP 1997
Pagination or Media Count : 16
Abstract : This paper presents results from the self-consistent solution of Schrodinger and Poisson equations obtained in one-dimensional non-uniformly doped MOS structures suitable for the fabrication of very short transistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultra-short MOSFETs.
Descriptors : *QUANTUM ELECTRONICS, *MOSFET SEMICONDUCTORS, THRESHOLD EFFECTS, FIELD EFFECT TRANSISTORS, ITALY, SCHRODINGER EQUATION, POISSON EQUATION.
Subject Categories : Electrical and Electronic Equipment
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE