Accession Number : ADA331495

Title :   Analysis of Quantum Effects in Non-Uniformly Doped MOS Structures

Corporate Author : MODENA UNIV (ITALY) IST DI FISICA

Personal Author(s) : Fiegna, Claudio ; Abramo, Antonio

PDF Url : ADA331495

Report Date : 23 SEP 1997

Pagination or Media Count : 16

Abstract : This paper presents results from the self-consistent solution of Schrodinger and Poisson equations obtained in one-dimensional non-uniformly doped MOS structures suitable for the fabrication of very short transistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultra-short MOSFETs.

Descriptors :   *QUANTUM ELECTRONICS, *MOSFET SEMICONDUCTORS, THRESHOLD EFFECTS, FIELD EFFECT TRANSISTORS, ITALY, SCHRODINGER EQUATION, POISSON EQUATION.

Subject Categories : Electrical and Electronic Equipment
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE