Accession Number : ADA331496

Title :   Optimization of Channel Profiles for Ultra-Short MOSFETs by Quantum Simulation,

Corporate Author : MODENA UNIV (ITALY) IST DI FISICA

Personal Author(s) : Fiegna, Claudio ; Abramo, Antonio

PDF Url : ADA331496

Report Date : 1996

Pagination or Media Count : 4

Abstract : In this paper, the self-consistent solution of 1-D Poisson and Schrodinger equations is performed on doping profiles suitable for the fabrication of advanced ultra-short n-MOSFETs. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles. In addition, the more advanced double-gate structure is analyzed and the reasons for possible advantages over more conventional single-gate ones (either SOI- or bulk-type) are investigated.

Descriptors :   *MOSFET SEMICONDUCTORS, THRESHOLD EFFECTS, FIELD EFFECT TRANSISTORS, ITALY, QUANTUM ELECTRONICS, DOPING, SCHRODINGER EQUATION, POISSON EQUATION.

Subject Categories : Electrical and Electronic Equipment
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE