Accession Number : ADA331625

Title :   IN and SB Based III-V Microstructures with Novel Electronic Properties.

Descriptive Note : Final rept. 1 Apr 93-31 Mar 97,

Corporate Author : CALIFORNIA INST OF TECH PASADENA DEPT OF APPLIED PHYSICS

Personal Author(s) : McGill, T. C.

PDF Url : ADA331625

Report Date : 16 OCT 1997

Pagination or Media Count : 9

Abstract : The focus of this research project was to investigate the basic properties of InAs/GaInSb interfaces and how those properties effect the control of growing abrupt interfaces. STM and SIMS studies showed that InAs grown on GaSb tends to be less abrupt because the GaAs bond strengths are stronger than in GaSb. The As in InAs exchanges with underlying Ga atoms, while the displaced Sb is incorporated in the InAs. Atomic-layer epitaxy at higher temperatures tends to yield smoother interfaces. Electron spectroscopy for chemical analysis (ESCA) was used to detennine band offsets at !nAs/GaSb interfaces; the offset was 90 meV higher for InAs on GaSb than for the reversed order. The end result was an imn,roved recine for high-quality structures for infrared devices.

Descriptors :   *INTERFACES, *ELECTRON SPECTROSCOPY, *INFRARED EQUIPMENT, CONTROL, MICROSTRUCTURE, GROWTH(GENERAL), HIGH TEMPERATURE, ELECTROMAGNETIC PROPERTIES, GALLIUM ARSENIDES, ATOMS, STRENGTH(MECHANICS), BONDED JOINTS, REVERSIBLE, GALLIUM, GROUP III COMPOUNDS, GROUP V COMPOUNDS, CHEMICAL ANALYSIS.

Subject Categories : Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE