Accession Number : ADA331761

Title :   Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method

Descriptive Note : Final technical rept. 1 Jun-1 Nov 97

Corporate Author : JOINT STOCK CO AGENCY FOR SCIENCE AND TECHNOLOGY SAINT PETERSBURG (RUSSIA)

Personal Author(s) : Mokhov, E. N. ; Vodakov, Yu. A. ; Roenkov, A. D. ; Baranov, P. G. ; Boiko, M. E.

PDF Url : ADA331761

Report Date : OCT 1997

Pagination or Media Count : 60

Abstract : The basic investigations leading to the fabrication of thick (more than 0.2 mm) monocrystalline layers of GaN on the silicon carbide substrates are performed. GaN layers were grown by sublimation sandwich-method in ammonia atmosphere. GaN polycrystalline powder and metallic Ga were used as a vapor source. The growth was carried out in quartz reactors both horizontal, and vertical types, in furnaces with high-frequency heating. The possibility of growing of thick monocrystalline GaN layers at growth temperature range from 1200 to 1230 deg C without preliminary deposition of buffer layers with very high rates up to 1 mm/h is shown.

Descriptors :   *LAYERS, *SINGLE CRYSTALS, *EPITAXIAL GROWTH, *VAPOR PHASES, *NITRIDES, *SILICON CARBIDES, *GALLIUM COMPOUNDS, BUFFERS, TEMPERATURE, HIGH FREQUENCY, POWDERS, FABRICATION, SUBSTRATES, AMMONIA, DEPOSITION, HEATING, SUBLIMATION, ATMOSPHERES, FURNACES, POLYCRYSTALLINE.

Subject Categories : Inorganic Chemistry
      Laminates and Composite Materials
      Mfg & Industrial Eng & Control of Product Sys
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE