Accession Number : ADA331815

Title :   Diamond and Related Materials: International Journal on the Science and Technology of Diamond and Related Materials, Volume 6, No. 10, August 1997.

Descriptive Note : Conference proceedings,

Corporate Author : ELSEVIER SCIENCE PUBLISHERS LTD BARKING(UNITED KINGDOM)

Personal Author(s) : Messier, R. ; Angus, J. C. ; Anthony, T. R. ; Bachmann, P. K. ; Bonnot, A. M.

PDF Url : ADA331815

Report Date : AUG 1997

Pagination or Media Count : 351

Abstract : The first European Conference on Silicon Carbide and Related Materials (ECSCRM 96) was held in Heraklion, Crete, Greece from October 6 to October 9, 1996. This was the first event of a series of biannual conferences addressing wide band gap semiconductors research field and supported by the European Union through the "Euroconferences" action. The next conference will be held in Montpellier, France in 1998. The conference was attended by 140 scientists from 13 countries representing most of the European research groups active in the subject. Thirteen invited talks, 18 oral and 61 poster contributions were presented in 8 oral and 2 poster sessions. These 92 contributions demonstrated the rapid development of wide band gap semiconductor research. Moreover, two panel discussions on European effort on SiC wafer production & SiC bulk and epitaxial growth apparatus and on SiC-based devices and applications were organized. Two main research areas were covered by the majority of presentations namely the SiC material aspect and the device-oriented aspect as well as balancing academic and industrial participation. The topics covered by the oral sessions were: 1. SiC bulk growth. 2, SiC epitaxial growth. 3. SiC characterization: Crystal structure & defects; Optical and electrical properties. 4. SiC processing: Oxidation, metallization, ion implantation and etching. 5. SiC-based devices and applications. 6. Nitrides growth and characterization. 7. Amorphous SiC and other SiC-related materials. The above topical structure is followed in this volume. The contributions were reviewed according to the "Diamond & Related Materials" Journal refereeing procedure and 75 manuscripts were accepted and published in this volume.

Descriptors :   *SYMPOSIA, *DIAMONDS, *EPITAXIAL GROWTH, *SILICON CARBIDES, OPTICAL PROPERTIES, CRYSTAL STRUCTURE, ETCHING, ELECTRICAL PROPERTIES, ION IMPLANTATION, NITRIDES, CONDUCTION BANDS, WAFERS, GREECE, BULK SEMICONDUCTORS, UNITED KINGDOM.

Subject Categories : Crystallography
      Solid State Physics
      Electricity and Magnetism
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE