Accession Number : ADA331914

Title :   A Study of Advanced Semiconductor Switch Physics and Technology

Descriptive Note : Final rept. Sep 94-Sep 97

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s) : Schamiloglu, E. ; Fleddermann, C. B. ; Focia, R. ; Gaudet, J.

PDF Url : ADA331914

Report Date : 19 SEP 1997

Pagination or Media Count : 48

Abstract : Russian ultra-fast, solid state switch technology was investigated in this study. Drift step recovery diodes (DSRDs) with silicon avalanche shapers (SASs) were experimentally examined. In addition, the SAS was studied using device-level modeling. The experiments and model results were compared with each other and with the Russian theory of operation. This research demonstrated that the Russian theory of the SAS was inconsistent with the operational behavior and circuit simulation. The SAS operates in a manner more consistent with a TRAPATT (TRApped Plasma Avalanche Triggered Transit) device. A simple circuit used to test the DSRD and SAS device is presented. Lifetime test results and switching voltage waveforms are discussed and evaluated. An optimum design for the SAS is offered based upon the theory of operation and code simulations. The University of New Mexico's drift diffusion furnace was used to construct a series of avalanche shapers similar in behavior to the Russian SAS. The results of this effort, including experimental data, are presented. Finally, a variety of commercialization opportunities for this fast semiconductor switch technology is offered.

Descriptors :   *SEMICONDUCTOR DEVICES, *SWITCHES, *ELECTRONIC SWITCHES, TEST AND EVALUATION, DIODES, USSR, SIMULATION, EXPERIMENTAL DATA, OPTIMIZATION, MODELS, PLASMAS(PHYSICS), WAVEFORMS, VOLTAGE, TRAPPING(CHARGED PARTICLES), CIRCUITS, SWITCHING, SOLID STATE ELECTRONICS, AVALANCHE EFFECT(ELECTRONICS).

Subject Categories : Electrical and Electronic Equipment
      Plasma Physics and Magnetohydrodynamics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE