Accession Number : ADA332147

Title :   Low-Temperature Grown III-V Semiconductors

Descriptive Note : Final rept. 1 Jun 96-31 May 97

Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA

Personal Author(s) : Tu, Charles W.

PDF Url : ADA332147

Report Date : NOV 1997

Pagination or Media Count : 2

Abstract : A new approach for n-type modulation doping in In-based heterostructures is proposed where intrinsic defects from low-temperature (LT) grown InP are utilized to provide charge carriers without an external shallow impurity doping source The success of this approach is demonstrated by results from InGaAs/LT-InP heterostructures, where doping is provided by P(In) antisites, introduced during off stoichiometric LT growth of InP. Photoluminescence in a magnetic field and Shubnikov de Haas oscillations are applied for characterizing the electronic structure and recombination mechanisms. The efficiency of electron transfer and quantum mobility of a two dimensional electron gas formed near the heterointerface is shown to be much higher as compared to traditional extrinsic doping

Descriptors :   *SEMICONDUCTORS, LOW TEMPERATURE, PHOTOLUMINESCENCE, N TYPE SEMICONDUCTORS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE