Accession Number : ADA332585

Title :   Measurement of the Linewidth Enhancement Factor at High Excitation Levels

Descriptive Note : Final rept. 31 Aug 94-30 Aug 97

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE

Personal Author(s) : Brueck, S. R. J.

PDF Url : ADA332585

Report Date : AUG 1997

Pagination or Media Count : 19

Abstract : We have undertaken the first systematic investigation of the impact of the quantum well epitaxial structure on the alpha-parameter in broad-area quantum well lasers. Modal gain, carrier-induced refractive index change, and a parameter have been measured in quantum wells of varying width, depth, and material composition using four structures: 60 A and 500 A GaAs quantum wells, referred to as 'narrow' and 'wide', and 60 A InGaAs wells with AlGaAs barriers of two different aluminum concentrations giving 'shallow' and 'deep' wells.

Descriptors :   *EXCITATION, *QUANTUM WELLS, *SEMICONDUCTOR LASERS, *EPITAXIAL GROWTH, *LASERS, MEASUREMENT, COMPOSITE MATERIALS, GALLIUM ARSENIDES, STRUCTURES, REFRACTIVE INDEX, ALUMINUM, GAIN, CONCENTRATION(COMPOSITION), COMPOSITION(PROPERTY), INDIUM, SHALLOW DEPTH.

Subject Categories : Inorganic Chemistry
      Lasers and Masers
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE