Accession Number : ADA332623
Title : Mechanisms of Semiconductor Dry Etching by Translationally Hot Atoms and Molecules
Descriptive Note : Final technical rept. 31 Aug 94-30 Aug 97
Corporate Author : JOINT INST FOR LAB ASTROPHYSICS BOULDERCO
Personal Author(s) : Leone, Stephen R.
PDF Url : ADA332623
Report Date : SEP 1997
Pagination or Media Count : 8
Abstract : A three year program of study was performed to investigate the effect of kinetic energy on etching. Both electron cyclotron resonance plasmas and inductively coupled radio frequency plasmas were investigated to determine the kinetic energies and source gas cracking of species in the plasmas. Studies were performed to measure the kinetic energy dependence of chlorine sticking to Si(100). Thermal etching studies of Si(100) by chlorine were completed using a novel single photon ionization method to detect SiCl and SiCl2 radical species directly.
Descriptors : *MOLECULES, *PLASMAS(PHYSICS), *ATOMS, *SEMICONDUCTORS, *ETCHING, *KINETIC ENERGY, THERMAL PROPERTIES, COUPLING(INTERACTION), HIGH TEMPERATURE, CRACKS, GASES, SILICON, CHLORIDES, IONIZATION, PHOTONS, DRY MATERIALS, ELECTRON PARAMAGNETIC RESONANCE, CHLORINE, CYCLOTRON RESONANCE, RADIOFREQUENCY POWER.
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Plasma Physics and Magnetohydrodynamics
Distribution Statement : APPROVED FOR PUBLIC RELEASE