Accession Number : ADA332707
Title : Defect Induced Lowering of Activation Energies at Step Bands in Co/Cu(100)
Corporate Author : ARIZONA STATE UNIV TEMPE DEPT OF PHYSICS
Personal Author(s) : Coyle, S. T. ; Scheinfein, M. R. ; Blue, James L.
PDF Url : ADA332707
Report Date : 1997
Pagination or Media Count : 12
Abstract : Complex topological features such as rectangular voids and step inclusions that were seen in secondary electron micrographs of Co films grown on Cu(100) at room temperature were reproduced in Monte Carlo simulations in the presence of step bands. Lowered activation energies at defects such as steps, kinks, and vacancies enhance step edge restructuring during growth and upon annealing. This results in features such as faceted step edges, rectangular pits, incorporation of Co into terraces, surface alloying, and surface segregation. Simulated growth structures are directly compared with those observed in an ultrahigh vacuum scanning transmission electron microscope.
Descriptors : *CRYSTAL DEFECTS, *COPPER, *COBALT, *ACTIVATION ENERGY, SIMULATION, ANNEALING, MAGNETIC PROPERTIES, EDGES, STRUCTURES, FILMS, EPITAXIAL GROWTH, MONTE CARLO METHOD, VOIDS, ROOM TEMPERATURE, ELECTRON MICROSCOPY, INCLUSIONS, SURFACES, ELECTRONS, TOPOLOGY, RECTANGULAR BODIES, SECONDARY EMISSION, VACANCIES(CRYSTAL DEFECTS).
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE