Accession Number : ADA332833

Title :   In-Situ UHV Low Temperature Ballistic-Electron-Emission Microscope for nm-Scale Imaging and Spectroscopy of Novel Compound Semiconductor Materials

Descriptive Note : Final rept. 1 Aug 96-31 Jul 97

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Narayanamurti, Venkatesh

PDF Url : ADA332833

Report Date : 31 OCT 1997

Pagination or Media Count : 8

Abstract : This report summarizes the status of development, under DURIP grant number F4962O-96-1-0390, of a new in situ, UHV low temperature Ballistic Electron Emission Microscope (BEEM) for study of localized transport through metal semiconductor heterostructures. The apparatus has been developed as planned in phases. Phase 1, which involves the development of UHV BEEM capability at room temperature, is fully functional at UCSB, and is yielding excellent BEEM imaging data. Phase II, which involves low temperature operation (Liquid N2) is also installed at UCSB and is in final stages of testing. Phase Ill, which involves an in situ evaporation chamber, is in final stages of assembly at Surface/Interface Inc. The UHV BEEM data already show that this will provide a unique materials characterization capability for electronic materials researchers at UCSB.

Descriptors :   *SEMICONDUCTORS, METALS, LOW TEMPERATURE, ELECTRON MICROSCOPY, ELECTRON EMISSION, HETEROGENEITY, SCHOTTKY BARRIER DEVICES.

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE