Accession Number : ADA332860

Title :   Silicon Based Heterojunction Devices For Microwave Amplification and Generation

Descriptive Note : Final rept. 1 Sep 93-31 Aug 96

Corporate Author : PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s) : Sturm, James C.

PDF Url : ADA332860

Report Date : 1997

Pagination or Media Count : 18

Abstract : Si-based heterojunction such as Si/Si(1-x)Ge(x) offer a route to high speed devices on silicon substrates. F(max)'s in excess of 150 GHz have been reported. In this report we describe the first measurements of the effect of carbon the bandgap in defect free Si/Si(1-x-y)Ge(x)C(y) films. The bandgap was measured by both transport and photoluminescence experiments. Adding carbon to compressively strained SiGeC films grown pseudormorphically on Si(100) was found to increase the bandgap by 21-26 meV/%C. This is far less than would occur by decreasing strain by just reducing the Ge content, and shows SiGeC can substantially expand the range of applications of Si-based heterostructures.

Descriptors :   *HETEROJUNCTIONS, *SEMICONDUCTING FILMS, *BIPOLAR TRANSISTORS, PHOTOLUMINESCENCE, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, STRAIN(MECHANICS), SILICON CARBIDES, GERMANIUM ALLOYS, SILICON ALLOYS, MICROWAVE AMPLIFIERS.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE