Accession Number : ADA332898
Title : JSEP Fellowship - Mirang Yoon
Descriptive Note : Final rept. 1 Mar 91-31 May 97
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE RESEARCH LAB OF ELECTRONICS
Personal Author(s) : Mochrie, Simon G. ; Allen, Johnathan
PDF Url : ADA332898
Report Date : 12 DEC 1997
Pagination or Media Count : 4
Abstract : The remarkably well-ordered morphology of faceted Si(113) surfaces was discovered under JSEP sponsorship in 1994 and has since been the subject of extensive research. In past years, our quantitative characterization of the equilibrium thermal behavior has validated the description of thermal faceting of stepped surfaces as a phase-separation of orientational phases. The construction of orientational phase diagram was performed with unprecedented precision, which enabled fine distinctions to be made between the phase separation of stepped Si(113) surfaces and that of other semiconductor and metal surfaces. Namely, the phase separation of stepped Si(113) surfaces is effected by the competition of a long-ranged repulsion between steps and a short-ranged attraction, a novel mechanism of current theoretical interest. In the 1996-1997 academic year, we have concluded the extension of our studies of the orientational phase diagram into previously unexplored azimuthal orientations vicinal to (113). Faceting transitions are observed on all surface orientations studied, which commonly are accompanied by anomalous step fluctuations and share similar characteristics of the orientational phase boundary. However, due to the strong anisotropy inherent to crystal surfaces, the transition temperatures for different azimuths are very different. We expect these refined observations to be accommodated in recently proposed theories of thermal faceting.
Descriptors : *EPITAXIAL GROWTH, THERMAL PROPERTIES, SEMICONDUCTORS, PHASE, SURFACE PROPERTIES, ANISOTROPY, SILICON, X RAY SCATTERING.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE