Accession Number : ADA333593
Title : Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices
Descriptive Note : Final technical rept. 15 Oct 94-14 Oct 97
Corporate Author : MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Personal Author(s) : Bhattacharya, Pallab ; Singh, J. ; Gulari, E.
PDF Url : ADA333593
Report Date : 26 DEC 1997
Pagination or Media Count : 38
Abstract : The objectives of this project were the understanding of heteroepitaxial growth of SiGe/Si, dislocation control for highly mismatched layers, and the application of such heterostructures to high speed microelectronics and optoelectronics. A new technique of dislocation control, using a low-temperature Si buffer layer, has been identified. SiGe/Si heterostructure FETs have been fabricated, using this technique. Heterostructure bipolar transistors have been utilized to realize the first SiGe-based integrated photoreceivers. The electro-optic coefficients in SiGe/Si quantum wells have also been measured. Modulators, whose operation principle is based on the small conduction band offset, in this heterostructure, has been demonstrated theoretically and experimentally, for the first time. Theoretical work, involving a charge control study of the interfacial effects in p-MOSFETs.
Descriptors : *EPITAXIAL GROWTH, *FIELD EFFECT TRANSISTORS, *MOSFET SEMICONDUCTORS, ELECTROOPTICS, QUANTUM WELLS, MICROELECTRONICS, HETEROGENEITY, CONDUCTION BANDS, MODULATORS, BIPOLAR TRANSISTORS, P TYPE SEMICONDUCTORS.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE