Accession Number : ADA334735
Title : Heteroepitaxy of SiGeC on Si
Descriptive Note : Final rept. 30 Jun 94-29 Jun 97
Corporate Author : ARIZONA STATE UNIV TEMPE
Personal Author(s) : Mayer, James W.
PDF Url : ADA334735
Report Date : 08 DEC 1997
Pagination or Media Count : 4
Abstract : Pseudomorphic alloys of Si(1-x-y) Ge(x)C(y), with compositions ranging from x approx. 0.20 and 0.01 < or = y < or = 0.002) to x approx. 0.50 and 0.02 < or = y < 0.04) were grown by chemical vapor deposition. Films with the lower alloy compositions were grown to thickness of 750 nm without the formation of misfit dislocations at the film/substrate interface. This is a four fold increase of the critical thickness over carbon-free alloys with similar Si:Ge ratios. High resolution x-ray diffraction analysis showed all of the pseudomorphic films grown in this study to be in compression. Calculations based on Vegard's law suggested that about 50% of the carbon is compensating for strain induced by the germanium.
Descriptors : *EPITAXIAL GROWTH, *ALLOYS, *SILICON, COMPRESSION, THICKNESS, INTERFACES, X RAY DIFFRACTION, FILMS, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, CARBON, HIGH RESOLUTION, CHEMICAL COMPOSITION, DISLOCATIONS, GERMANIUM.
Subject Categories : Inorganic Chemistry
Properties of Metals and Alloys
Distribution Statement : APPROVED FOR PUBLIC RELEASE