Accession Number : ADA334789

Title :   AASERT: Epitaxial Metallizations of III-V Semiconductors

Descriptive Note : Final rept. 30 Jun 94-29 Jun 97

Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Cohen, P. I.

PDF Url : ADA334789

Report Date : JUN 1997

Pagination or Media Count : 18

Abstract : The nucleation and growth of three intermetallic systems on III-V semiconductors have been examined or begun. FeAl and CoGa have been grown on GaAs(100) and their structural and magnetic properties examined. For their nucleation and growth, the main techniques used were ultrahigh vacuum scanning tunneling microscopy and reflection high energy electron diffraction. Direct confirmation of the growth transition from single-layer to bilayer for FeAl was obtained. Magnetooptical Kerr effect measurements showed the transition in magnetic properties of FeAl. These results suggest that fundamental aspects crucial to spin-valve devices could be studied without the complication of a heterointerface. Studies of CoGa on GaAs showed how to prepare smooth films of CoGa and observed a fourfold anisotropy. However it left unanswered the controversy of whether lattice matching would allow preparation of pinhole free films. Finally, an effort to grow prepare high quality GaN was started, to serve as a substrate for the in situ growth of HfN films. A source was constructed and GaN films were prepared. However, deposition of this promising material has not yet been attempted.

Descriptors :   *GALLIUM ARSENIDES, *EPITAXIAL GROWTH, *SEMICONDUCTORS, *IRON, *GROUP III COMPOUNDS, *GROUP IV COMPOUNDS, *GROUP V COMPOUNDS, *COBALT, *INTERMETALLIC COMPOUNDS, *ALUMINIDES, *METALLIZING, MAGNETIC PROPERTIES, HAFNIUM, STRUCTURAL PROPERTIES, FILMS, SUBSTRATES, NUCLEATION, NITRIDES, DEPOSITION, ANISOTROPY, TRANSITIONS, LATTICE DYNAMICS, ULTRAHIGH VACUUM, KERR MAGNETOOPTICAL EFFECT.

Subject Categories : Electrical and Electronic Equipment
      Coatings, Colorants and Finishes
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE