Accession Number : ADA335215
Title : A.S.E. Source at 1550nm for IFOG Applications
Descriptive Note : Quarterly progress rept. 6 Sep-5 Dec 97
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Gopinath, Annand ; Berglund, William ; Ellerbusch, Ben
PDF Url : ADA335215
Report Date : 05 DEC 1997
Pagination or Media Count : 3
Abstract : We performed annealing studies for the Al2O3 guides, and we have identified the best annealing temperatures in terms of lifetimes and luminescence. For example a 0.1% Er doped film is best annealed at 500 C for a period of 1 hour in an oxygen ambient atmosphere. The lifetimes measured with 0.1% Er is around 4 ms, which is a factor of two less than as seen in fiber for a tenth of that doping level but our previous measurements indicate increased gain. Measurements on the Al2O3 guides showed 20% improvement of lifetime achieved by annealing. Erbium and Ytterbium codoped films had one half the lifetimes of those doped with Erbium alone.
Descriptors : *ANNEALING, *ALUMINUM OXIDES, *DOPING, *ERBIUM, TEMPERATURE, THIN FILMS, OXYGEN, LUMINESCENCE, YTTERBIUM.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE