Accession Number : ADA335240
Title : SiC Discrete Power Devices-Analysis and Optimization of the Planar 6H-SiC ACCUFET; A Planar Lateral Channel SiC Vertical High Power JFET; The Planar Lateral Channel MESFET-A New SiC Vertical Power Device; Growth via Hot Wall Chemical Vapor Deposition & Characterization of 6H and 4H SiC Thin Films
Descriptive Note : Annual technical rept.15 Jan 97-15 Jan 98
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH
Personal Author(s) : Davis, R. F. ; Baliga, B. J. ; Tomozawa, H. S. ; Shenoy, P. M.
PDF Url : ADA335240
Report Date : 15 JAN 1998
Pagination or Media Count : 51
Abstract : A novel planar accumulation channel SiC MOSFET structure is reported. The problems of gate oxide rupture and poor channel conductance previously reported in SiC UMOSFETs are solved by using a buried P+ layer to shield the channel region. The fabricated 6H-SiC unterminated devices had a blocking voltage of 350 V with a specific on-resistance of 18 m ohms-sq cm at room temperature for a gate bias of only 5 V. This measured specific on-resistance is within 2.5X of the value calculated for the epitaxial drift region (10(exp 16) /cucm, 10 micrometers), which is capable of supporting 1500 V. In addition, a novel planar lateral channel SiC high power JFET is described. Two-dimensional numerical simulations predicted low on-resistances with excellent current saturation and square FBSOA, which have been experimentally confirmed. A novel planar lateral channel SiC MESFET structure with vertical current flow in the drift region is also proposed and demonstrated by modeling and fabrication. A hot wall chemical vapor deposition system has been constructed for the growth and doping of 6H- and 4H-SiC thin films at very high temperatures and high growth rates. The design incorporates a separate load lock to which a growth chamber and a RHEED chamber are attached.
Descriptors : *FIELD EFFECT TRANSISTORS, *SILICON CARBIDES, *MOSFET SEMICONDUCTORS, HIGH POWER, CONDUCTIVITY, TWO DIMENSIONAL, HIGH TEMPERATURE, THIN FILMS, GATES(CIRCUITS), CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, RUPTURE, ROOM TEMPERATURE, SATURATION, DRIFT, OXIDES, PLANAR STRUCTURES, FLOW, ACCUMULATION, CHANNELS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE